Quasicrystals, which possess a unique combination of order and aperiodicity, have attracted considerable interest due to their unusual physical properties. In particular, thin films of quasicrystals show promise for a variety of applications, including catalysis, thermal insulation, and the creation of new electronic devices.
Methods for producing thin films of quasicrystals range from thermal evaporation and magnetron sputtering to molecular beam epitaxy. The choice of method depends on the required film thickness, composition, and degree of ordering. Thermal evaporation is often used to produce films with controlled stoichiometry, while magnetron sputtering allows for the creation of films with high density and adhesion to the substrate.
The transport properties of thin films of quasicrystals differ significantly from those of ordinary crystals and amorphous materials. The aperiodic structure of quasicrystals leads to a complex band structure and scattering of charge carriers, which causes low electrical conductivity and high thermoelectric efficiency. Studies of transport properties allow us to better understand the nature of electronic states in quasicrystals and optimize them for specific applications.
We provide a brief overview of the techniques for creating quasicrystalline thin films, focusing on the limitations and methods used to form stable triple quasicrystalline layers. As an example, we will consider the creation of i-Al–Cu–Fe and i-Al–Pd–Re thin films and the study of size effects in electrical conductivity.
Since the beginning of the research on quasicrystals (QC), attempts have been made to create them in the form of thin films. Such experiments allow one to control and study the conditions and mechanisms of QC phase formation. The first experiments showed the possibility of obtaining i-Al–Mn from solid phases without quenching from the liquid state. Thin films also allow one to study physical properties and applications that are inaccessible for bulk samples.
Thin films of binary metastable quantum dots have been produced by various methods (evaporation, ion implantation, ion beam mixing, etc.). High-temperature sequential deposition was used to obtain oriented i-Al–Mn films. In these experiments, Mn was evaporated onto an oriented Al film at high temperature. By controlling the temperature and the deposition rate of Mn, it was possible to study the kinetics and location of quantum dot formation.
Author: T Grenet, F Giroud, K Loubet, A Bergman, G Safran, J Labar, P Barna, JL Joulaud, M Capitan
Institute: LEPES-CNRS, PO Box 166, 38042 Grenoble, France, RITPMS H-1121 Budapest, Konkony Tege Street 29–33, Hungary, ESRF BP 220, 38043 Grenoble, France