The paper studies the possibility of obtaining thin films of the ternary Al–Cu–Fe alloy by vapor-phase deposition from a single source. The effect of substrate temperature on the composition and structure of the resulting films is studied.
Interest in Al–Cu–Fe alloys is due to their unique properties, such as high hardness, corrosion resistance, and the ability to form quasicrystalline phases. Thin films of such alloys are used in various fields, including protective coatings, sensors, and microelectronics. One promising method for producing thin films is vapor-phase deposition, which allows controlling the composition and structure of the material.
Al–Cu–Fe films were deposited on silicon substrates by thermal evaporation from a single source containing an Al–Cu–Fe alloy. The substrates were heated to different temperatures in the range from 300 to 600 °C. The composition and structure of the resulting films were analyzed by X-ray diffraction and energy-dispersive spectroscopy.
Stable icosahedral quasicrystalline Al–Cu–Fe films were fabricated using a single-source chemical vapor deposition (CVD) technique, employing both indirect heating and electron beam heating. The formation of these films in a stable icosahedral phase by a single-source indirect heating technique is demonstrated for the first time. A direct comparison of the two different heating techniques is performed. It is found that the optimal compositions of the resulting films, possessing the required characteristics, correspond to thin Al films.
This paper presents the results of the formation of stable icosahedral Al–Cu–Fe quasicrystals of the composition Al62.9Cu24.6Fe12.5 (indirect heating) and Al63.1Cu24.5Fe12.4 (electron beam method), respectively. The specific electrical resistance of the films created by both methods was approximately 2000 μOhm cm at room temperature and about 4000 μOhm cm at 10 K.
The results of the studies showed that the substrate temperature has a significant effect on the composition and structure of the films. At low temperatures, films with an amorphous structure and uneven distribution of elements are deposited. With an increase in the substrate temperature, crystallization of the films and the formation of intermetallic compounds occur. It was found that at the optimal substrate temperature, films with a quasi-crystalline structure can be obtained.
The single-source vapor deposition method is promising for producing thin Al–Cu–Fe films with controlled composition and structure. By varying the substrate temperature, films with different phase states can be produced, including amorphous, crystalline, and quasi-crystalline.
Author: A. Kanjilala, U. Tiwari, R. Chatterjee
Institute: Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi, 110016, India, Solid State Physics Laboratories, Lucknow Road, Delhi, India