Author: T. Eisenhammera, A. Mahr, A. Haugeneder, W. Assmann Institute: TiNOx Society of Energy and Energetics mbll, Schwere Reiterstrasse 35/26, D-80797 Munich, Germany

AlCuFe films of various thicknesses were fabricated using ion-beam sputtering on substrates heated to temperatures of 480-490 °C. The composition of these films, determined by the elastic return method, was found to be Al62Cu25Fe13. X-ray diffraction results for AlCuFe films approximately 200 nm thick demonstrated the presence of a mixture of quasi-crystalline and crystalline phases. Selective absorbers were developed by depositing multilayer systems consisting of 50 nm Al2O3/10-12 nm AlCuFe/70 nm Al2O3 on a copper substrate placed on Al2O3-coated silicon wafers. The solar radiation absorption coefficient reached 90%, and the directional emissivity at room temperature was about 2.5%. Optical constants and constant resistance data for the AlCuFe films are also presented.

Selective absorbers based on AlCuFe thin films are promising materials with unique optical and electrical properties. These films, created by magnetic sputtering, demonstrate high efficiency in light absorption in certain spectra, which makes them ideal candidates for use in solar cells and photonic devices.

The structure of these films allows optimizing the interaction of light waves with the surface, which in turn helps to increase the absorption coefficient. In addition, alloying with aluminum, copper and iron provides not only improved absorption properties, but also high thermal stability and mechanical strength of the finished materials.

The development and research of such selective absorbers opens up new horizons in the field of energy, allowing the creation of more efficient solar panels and devices for converting light into electrical energy. The new approach to creating films also emphasizes environmental sustainability, which is important in the conditions of the modern world, striving to use clean and renewable energy sources.